50W Power Amplifier – Mosfet (K1058 + J162) The 50W Power Amplifier OCL Mosfet (K1058 + J162) is easy to build,and very inexpensive. To use Power Supply +35V -35V 2A.Mosfet (K1058 + J162) must be Disimpan oleh jake joesphone.
Type Designator: 2SJ162
Type of Transistor: MOSFET
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- J162 DATASHEET PDF - J Datasheet: Silicon P-Channel MOS FET, J PDF VIEW Download Hitachi - Renesas Electronics, J 1 page Datasheet PDF, Pinouts, Data Sheet.
- Hitachi - Renesas Electronics J162 Datasheet: Silicon P-Channel MOS FET, J162 Datasheet, J162 PDF, Datasheets PDF J162, Pinout, Data Sheet, Circuits.
- 2013 Feb 17 - The 50W Power Amplifier OCL Mosfet (K1058 + J162) is easy to build,and very inexpensive. To use Power Supply +35V -35V 2A.Mosfet (K1058 + J162) must be.
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 160 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 0.15 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO3P
2SJ162 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ162 Datasheet (PDF)
0.1. rej03g0847 2sj160 2sj161 2sj162.pdf Size:83K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.2. 2sj160 2sj161 2sj162.pdf Size:38K _hitachi
2SJ160, 2SJ161, 2SJ162Silicon P-Channel MOS FETADE-208-1182 (Z)1st. EditionMar. 2001ApplicationLow frequency power amplifierComplementary pair with 2SK1056, 2SK1057 and 2SK1058Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diode
K1058
9.1. 2sj168.pdf Size:330K _toshiba
2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = -50 mA D Low on resistance: R = 1.3 (typ.) @ I = -50 mA DS (ON) D Enhancement-
9.2. 2sj167.pdf Size:294K _toshiba
2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs Low on resistance: R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK1
9.3. 2sj166.pdf Size:350K _nec
9.4. 2sj165.pdf Size:384K _nec
9.5. 2sj164.pdf Size:27K _panasonic
Silicon Junction FETs (Small Signal) 2SJ1642SJ164Silicon P-Channel JunctionUnit : mmFor switching4.0 0.2Complementary with 2SK1104 Features Low ON-resistance Low-noise characteristicsmarking1 2 3 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1.27 1.271 : SourceGate-Drain voltage VGDS 65 V 2.54 0.152 : GateDrain current ID 20 mA3 :
9.6. 2sj163.pdf Size:29K _panasonic
Silicon Junction FETs (Small Signal) 2SJ1632SJ163Silicon P-Channel JunctionUnit : mmFor general use switching+0.22.8 0.3Complementary with 2SK1103 +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1 Low ON-resistance Low-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Gate-Drain voltage VGDS 65 V0.4 0.2
Middle earth shadow of war cheat engine skill points. 9.7. 2sj169 2sj170.pdf Size:119K _hitachi
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9.8. 2sj166.pdf Size:1307K _kexin
SMD Type MOSFETP-Channel MOSFET2SJ166SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 50 (VGS =-4V)+0.11.9-0.1 Comp;ementary to 2SK11321. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage
9.9. 2sj166-3.pdf Size:1317K _kexin
SMD Type MOSFETP-Channel MOSFET2SJ166SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V)1 2+0.02+0.10.15 -0.020.95-0.1 RDS(ON) 50 (VGS =-4V)+0.11.9-0.2 Comp;ementary to 2SK11321. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V
Datasheet: 2SJ79, 2SK1056, 2SK1057, 2SK1058, 2SK2220, 2SK2221, 2SJ160, 2SJ161, IRFP260M, 2SJ351, 2SJ352, RQA0011DNS, RQA0004PXDQS, RQA0005QXDQS, RQA0010VXDQS, RQA0008RXDQS, RQA0009TXDQS.
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